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| IPG20N06S3L-35 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 35 20 V m A Features * Dual N-channel Logic Level - Enhancement mode * AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Product (RoHS compliant) * 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-35 Package PG-TDSON-8-4 Marking 3N06L35 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 C, V GS=10 V1) T C=100 C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg I D=10A T C=25 C Value Unit A 20 15.5 80 55 20 16 30 -55 ... +175 55/175/56 mJ A V W C Rev. 1.0 page 1 2008-09-23 IPG20N06S3L-35 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current5) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=15 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current5) Drain-source on-state resistance5) I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=7A V GS=10 V, I D=11A 55 1.2 1.7 0.01 2.2 1 A V 100 60 5 K/W - 1 1 53 30 100 100 62 35 nA m Rev. 1.0 page 2 2008-09-23 IPG20N06S3L-35 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance5) Output capacitance5) Reverse transfer capacitance5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2, 5) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) one channel active Diode pulse current one channel active 2) C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=20 A, R G=25 V GS=0 V, V DS=25 V, f =1 MHz - 1330 170 160 3 5 8 9 1730 220 240 - pF ns Q gs Q gd Qg V plateau V DD=11 V, I D=20 A, V GS=0 to 10 V - 7 3 18 5.1 9 4.5 23 - nC V IS T C=25 C I S,pulse V GS=0 V, I F=20 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s - - 20 A - - 80 Diode forward voltage V SD - 1.0 1.3 V Reverse recovery time2) t rr - 10 - ns Reverse recovery charge2, 5) 1) Q rr - 10 - nC Current is limited by bondwire; with an R thJC =5 K/W the chip is able to carry 22A at 25C. Specified by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Qualified at -5V and +16V. 5) Per channel page 3 2008-09-23 Rev. 1.0 IPG20N06S3L-35 1 Power dissipation P tot = f(T C); V GS 6 V; one channel active 2 Drain current I D = f(T C); V GS 6 V; one channel active 35 25 30 20 25 15 P tot [W] 20 15 I D [A] 10 5 0 0 50 100 150 200 0 50 100 150 200 10 5 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25C; D =0; one channel active parameter: t p 100 1 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 10 s 0.5 100 s 100 Z thJC [K/W] 1 ms 0.1 0.05 I D [A] 10 10-1 0.01 single pulse 1 0.1 1 10 100 10-2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2008-09-23 IPG20N06S3L-35 5 Typ. output characteristics5) I D = f(V DS); T j = 25 C parameter: V GS 80 10 V 6 Typ. drain-source on-state resistance5) R DS(on) = f(I D); T j = 25 C parameter: V GS 100 3.5 V 4.5 V 5V 6V 60 80 40 6V R DS(on) [m] I D [A] 60 5.5 V 20 5V 4.5 V 4V 3.5 V 40 10 V 0 0 2 4 6 8 20 0 20 40 60 80 V DS [V] I D [A] 7 Typ. transfer characteristics5) I D = f(V GS); V DS = 6V parameter: T j 80 8 Typ. drain-source on-state resistance5) R DS(on) = f(T j); I D = 11 A; V GS = 10 V 60 -55 C 60 50 I D [A] 25 C 40 R DS(on) [m] 7 40 175 C 20 30 0 1 2 3 4 5 6 20 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2008-09-23 IPG20N06S3L-35 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.5 10 Typ. Capacitances5) C = f(V DS); V GS = 0 V; f = 1 MHz 104 2 150A V GS(th) [V] 1.5 15A C [pF] Ciss 10 1 3 Coss 0.5 Crss 0 -60 -20 20 60 100 140 180 102 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis5) IF = f(VSD) parameter: T j 102 12 Avalanche characteristics5) I A S= f(t AV) parameter: T j(start) 100 10 100 C 150 C 25 C 101 I AV [A] 175 C 25 C I F [A] 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2008-09-23 IPG20N06S3L-35 13 Avalanche energy5) E AS = f(T j) parameter: I D 125 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 65 100 5A 60 V BR(DSS) [V] 75 E AS [mJ] 55 50 10A 50 25 20A 0 25 50 75 100 125 150 175 45 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge5) V GS = f(Q gate); I D = 20 A pulsed parameter: V DD 12 16 Gate charge waveforms V GS 11 V 44 V 10 Qg 8 V GS [V] 6 V g s(th) 4 2 Q g (th) Q gs 0 5 10 15 20 25 Q sw Q gd Q gate 0 Q gate [nC] Rev. 1.0 page 7 2008-09-23 IPG20N06S3L-35 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2008 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2008-09-23 IPG20N06S3L-35 Revision History Version Date Changes Revision 1.0 22.09.2008 Initial Final Data Sheet Rev. 1.0 page 9 2008-09-23 |
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